A novel concept of drain current modelling in rectangular normal MOS transistors with\nthe Lorentz force has been proposed for the first time. The single-drain MOS transistor is qualified\nas a magnetic sensor. To create the Lorentz force, a DC loop current is applied through an on-chip\nmetal loop around the device, and the relation between the applied loop current and the created\nmagnetic field is assumed to be linear in nature. The drain current of the MOS transistor is reduced\nwith the applied Lorentz force from both directions. This change in the drain current is ascribed\nto a change in mobility in the strong inversion region, and a change in mobility of around 4.45% is\nobserved. To model this change, a set of novel drain current equations, under the Lorentz force, for\nthe strong inversion region has been proposed. A satisfactory agreement of an average error of less\nthan 2% between the measured and the calculated drain currents under the magnetic field created by\nan on-chip metal loop is achieved.
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